Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage

The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology, X-ray diffraction (XRD), RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can in...

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Bibliographic Details
Published in:Transactions of Nonferrous Metals Society of China 2006-06, Vol.16 (z1), p.s313-s316
Main Authors: MA, Ying, WANG, Lin-jun, LIU, Jian-min, SU, Qing-feng, XU, Run, PENG, Hong-yan, SHI, Wei-min, XIA, Yi-ben
Format: Article
Language:English
Subjects:
diamond film
HFCVD
orientation
positive bias
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Summary:The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology, X-ray diffraction (XRD), RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth, making the growth of the high quality diamond film easier and cheaper than using other methods.
ISSN:1003-6326
DOI:10.1016/S1003-6326(06)60199-4