Pulse-plating electrodeposition and annealing treatment of CuInSe2 films

CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were charac...

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Bibliographic Details
Published in:Transactions of Nonferrous Metals Society of China 2008-08, Vol.18 (4), p.884-889
Main Authors: LIU, Fang-yang, LÜ, Ying, ZHANG, Zhi-an, LAI, Yan-qing, LI, Jie, LIU, Ye-xiang
Format: Article
Language:English
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Summary:CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were characterized by X-ray diffractometry (XRD), scanning electron microscopy(SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. And the influence of pulse parameters on film quality was studied. The chalcopyrite phase CuInSe2 films with smooth surface and stoichiometric composition are obtained at a pulse potential from -0.65 to -0.7 V (vs SCE), a pulse period of 1-9 ms with a duty cycle of 33% and annealing treatment.
ISSN:1003-6326
DOI:10.1016/S1003-6326(08)60153-3