Photoresponse and H2 gas sensing properties of highly oriented Al and Al/Sb doped ZnO thin films

ZnO:Al and ZnO:Al/Sb thin films have been prepared and investigated.The thin films were deposited on Si substrates by the sol-gel method.The structural,optical and electrical properties of ZnO films have been investigated by spectrophotometry,ellipsometry,X-ray diffraction and current-voltage charac...

Full description

Saved in:
Bibliographic Details
Published in:Progress in natural science 2013-12, Vol.23 (6), p.519-523
Main Authors: Benelmadjat, Hannane, Boudine, Boubekeur, Keffous, Aissa, Gabouze, Noureddine
Format: Article
Language:English
Subjects:
Co-doping
Gas
Gas sensing
oxide
Photoresponse
sensing
Thin
Thin films
Zinc
Zinc oxide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:ZnO:Al and ZnO:Al/Sb thin films have been prepared and investigated.The thin films were deposited on Si substrates by the sol-gel method.The structural,optical and electrical properties of ZnO films have been investigated by spectrophotometry,ellipsometry,X-ray diffraction and current-voltage characterizations.It is found that the films exhibit wurtzite structure with a highly c-axis orientation perpendicular to the surface of the substrate,a high reflectivity in the infrared region and a response to illumination.Furthermore,it has been found that Si/（ZnO:Al/Sb）/Al photodiode is promising in photoconduction device while Si/（ZnO:Al）/Al can be used as gas sensor responding to the low H2concentrations.
ISSN:1002-0071
DOI:10.1016/j.pnsc.2013.11.001