Emitter-base breakdown: Measurement and simulation

In order to decrease the base width of a bipolar transistor while maintaining acceptably low base resistance, the doping concentration in the base region must be increased. This, however, can lead to unacceptably low emitter-base reverse breakdown characteristics. The optimization of this trade-off...

Full description

Saved in:
Bibliographic Details
Published in:ESSDERC '92: 22nd European Solid State Device Research conference 1992, Vol.19 (1), p.695-698
Main Authors: Bergner, W., Packan, P., Seidl, B., Klose, H.
Format: Article
Language:English
Subjects:
Avalanche breakdown
Bipolar transistors
Breakdown voltage
Character generation
Doping profiles
Electric breakdown
Leakage current
Microelectronics
Semiconductor process modeling
Tunneling
Citations: Items that this one cites
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In order to decrease the base width of a bipolar transistor while maintaining acceptably low base resistance, the doping concentration in the base region must be increased. This, however, can lead to unacceptably low emitter-base reverse breakdown characteristics. The optimization of this trade-off requires very accurate two dimensional process and device simulation programs. Currently, the models in most device simulation programs cannot accurately describe the reverse leakage characteristics of emitter-base junctions. This paper introduces an accurate model for these effects by including band-to-band tunneling (BBT) in the carrier generation model. This makes it possible to optimize the trade-off between low base resistance and high emitter-base breakdown voltage through the use of process and device simulation programs.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(92)90524-U