Physically‐Deposited Hole Transporters in Perovskite PV: NiOx Improved with Li/Mg Doping (Adv. Mater. Technol. 7/2024)

Hole Transport Material In article number 2301760, Salih Alper Akalin and co‐workers explore Li and Mg co‐doped NiOx thin films physically deposited from developed sputtering targets obtained through cold isostatic pressing and sintering. Improvements in mobility and conductivity values are observed...

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Bibliographic Details
Published in:Advanced materials technologies 2024-04, Vol.9 (7), p.n/a
Main Authors: Akalin, Salih Alper, Erol, Mustafa, Uzunbayir, Begum, Oguzlar, Sibel, Yildirim, Serdar, Gokdemir Choi, Fatma Pinar, Gunes, Serap, Yilmazer Menda, Ugur Deneb, Mendes, Manuel J.
Format: Article
Language:English
Subjects:
hole transport material
lithium/magnesium doping
perovskite solar cells
photovoltaics
sputtered nickel oxide
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Summary:Hole Transport Material In article number 2301760, Salih Alper Akalin and co‐workers explore Li and Mg co‐doped NiOx thin films physically deposited from developed sputtering targets obtained through cold isostatic pressing and sintering. Improvements in mobility and conductivity values are observed with Li and Mg doping, which contribute to enhanced PSC performance when used as an HTM layer in the glass‐indium tin oxide/NiOx‐based HTM/MAPbI3/phenyl butryic acid methyl ester bathocuproine/Ag architecture.
ISSN:2365-709X
2365-709X
DOI:10.1002/admt.202470030