SnS and SnS2 thin films deposited using a spin-coating technique from intramolecularly coordinated organotin sulfides

• Published in: Applied organometallic chemistry 2015-03, Vol.29 (3), p.176-180
• Main Authors: Řičica, Tomáš, Střižík, Lukáš, Dostál, Libor, Bouška, Marek, Vlček, Milan, Beneš, Ludvík, Wágner, Tomáš, Jambor, Roman
• Format: Article
• Language: English
• Subjects: organotin sulfide; single-source precursor; spin-coating process
• ISSN: 0268-2605; 1099-0739
• DOI: 10.1002/aoc.3267

Synthesis and applications of organotin(II) sulfide ({2,6‐(Me2NCH2)2C6H3}Sn)2(μ‐S) (1), organotin(II) thiophenolate {2,6‐(Me2NCH2)2C6H3}Sn(SPh) (2) and organotin(IV) heptasulfide {2,6‐(Me2NCH2)2C6H3}2Sn2S7 (3) as potential single‐source precursors (SSPs) for the deposition of SnS or SnS2 thin films using a spin‐coating method are reported. Compounds 1, 2 and 3 differ either by tin oxidation state or by Sn:S ratio (Sn:S = 2:1 in 1, 1:1 in 2 and 2:7 in 3). It is shown that compound 1 is not a suitable SSP for thin‐film fabrication using the spin‐coating process because of its incomplete decomposition at annealing temperature. However, compounds 2 and 3 seem to be promising SSPs for spin‐coating of amorphous semiconducting thin films of SnS and SnS2, respectively. Copyright © 2015 John Wiley & Sons, Ltd. Application of intramolecularly coordinated organotin(II) sulfide ({2,6‐(Me2NCH2)2C6H3}Sn)2(μ‐S) (1), organotin(II) thiophenolate {2,6‐(Me2NCH2)2C6H3}Sn(SPh) (2) and organotin(IV) heptasulfide {2,6‐(Me2NCH2)2C6H3}2Sn2S7 (3) as potential single‐source precursors (SSPs) for deposition of SnS or SnS2 thin films using a spin‐coating method is reported. While 1 is not a suitable SSP, 2 and 3 were successfully applied for the preparation of amorphous semiconducting thin films of SnS and SnS2, respectively.