Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport Properties (Adv. Phys. Res. 12/2024)

• Published in: Advanced Physics Research 2024-12, Vol.3 (12), p.n/a
• Main Authors: Yakovlev, Dmitry S., Frolov, Aleksei V., Nazhestkin, Ivan A., Temiryazev, Alexei G., Orlov, Andrey P., Shvartzberg, Jonathan, Dizhur, Sergey E., Gurtovoi, Vladimir L., Hovhannisyan, Razmik, Stolyarov, Vasily S.
• Format: Article
• Language: English
• ISSN: 2751-1200; 2751-1200
• DOI: 10.1002/apxr.202470027

Atomic Force Lithography The study 2400108 by Dmitry Yakovlev and co‐workers introduces a novel approach to using atomic force microscopy (AFM) pulse force nanolithography to fabricate Bi2Se3 nanoribbons with high precision. This allows control over their dimensions and prevents contamination from standard electron beam lithography or reactive ion etching. The illustration shows a pie of complex multilayer heterostructures cut into small pieces by using atomic force lithography with an accuracy of a few nanometers. The results also reveal insights into electronic structure, conductance, and phase coherence in TIs, with thermal excitation and bias current affecting coherence length. This new AFM technique offers a scalable and precise approach.