Analysis of current - voltage - temperature characteristics of In and Cu contacts on n-type MoSe2 single crystals

The current voltage characteristics of In / Cu with n‐type MoSe2 Schottky diodes were measured over a wide temperature range 50 < T < 300 K. The interface formed by In and MoSe2 shows ohmic behavior after annealing the contact at 100 °C for 12 h. The ohmic nature was retained at all the measur...

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Bibliographic Details
Published in:Crystal research and technology (1979) 2011-01, Vol.46 (1), p.61-64
Main Authors: Sumesh, C. K., Patel, K. D., Pathak, V. M., Srivastav, R.
Format: Article
Language:English
Subjects:
current-voltage characteristics
metal-semiconductor contact
ohmic contact
Schottky barrier diode
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Summary:The current voltage characteristics of In / Cu with n‐type MoSe2 Schottky diodes were measured over a wide temperature range 50 < T < 300 K. The interface formed by In and MoSe2 shows ohmic behavior after annealing the contact at 100 °C for 12 h. The ohmic nature was retained at all the measured temperatures. The Cu ‐ nMoSe2 interface formed a Schottky junction diode with a good rectification ratio. The Schottky barrier height and the ideality factor thereby obtained were 0.72 eV and 1.45, respectively, at room temperature. Below room temperature, the barrier height and the ideality factor vary with decreasing temperature. The changes are significant at low temperatures. Barrier height inhomogeneities at the interface cause deviation in the zero‐bias barrier height and the ideality factor at low temperatures, and produce extra current such that I‐V characteristics remain consistent with the thermionic emission mechanism. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.201000553