The growth and dislocation characterization of Yb0.005Y0.848Lu0.147VO4 mixed laser crystal

• Published in: Crystal research and technology (1979) 2014-10, Vol.49 (10), p.785-788
• Main Authors: Shi-ming, Zhang, Bing, Teng, De-gao, Zhong, Bing-tao, Zhang, Chao, Wang, Yu-yi, Li, Li-Ting, Yang, Peng, You
• Format: Article
• Language: English
• Subjects: czochralski; dislocation; Laser crystal; TEM; vanadates
• ISSN: 0232-1300; 1521-4079
• DOI: 10.1002/crat.201400120

A new mixed laser crystal, Yb0.005Y0.848Lu0.147VO4, has been successfully grown using the Czochralski method. An ICP‐OES was used to measure the concentrations of elements (Yb, Y, Lu, V) in the crystal, and the chemical formula was determined. X‐ray powder diffraction analysis shows that the crystal has ZrSiO4 structure. A pair of edge dislocations with certain orientation was observed by the HREM, and the orientation was confirmed by the calibration of the diffraction spots. The formation mechanism of this type dislocation was given by analysis on structure and thermal expansion of crystal. The suggestion to avoid these dislocations was also given. A Yb0.005Y0.848Lu0.147VO4 mixed laser crystal was grown by the Czochralski method. HREM was firstly used to characterize the structure of dislocation in vanadates and observed a new morphology of dislocations. This pair of dislocation forms because of the anisotropy of thermal expansion, the weak connection and relatively big interplanar distance between the atom layers. Appropriately slow cooling rate should be used to avoid the dislocations.