Substitution effects on ferroelectric, leakage current and anti-fatigue characteristic of Bi4-xSbxTi3O12 thin films

• Published in: Crystal research and technology (1979) 2016-12, Vol.51 (12), p.696-701
• Main Authors: Wang, Zan, Jiang, Wei, Li, San-xi, Song, De-zhi
• Format: Article
• Language: English
• Subjects: anti-fatigue characteristic; Bismuth titanate; Ferroelectric properties; Leakage current density; Sb3+-substitution
• ISSN: 0232-1300; 1521-4079
• DOI: 10.1002/crat.201600073

Bi4‐xSbxTi3O12 (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO2/Si substrates by sol‐gel method. The effects of various Sb3+ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi4‐xSbxTi3O12 (x≠0) thin films prefer (117) orientation. The substitution Sb3+ for Bi3+ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi4‐xSbxTi3O12 films display exciting electric properties. Especially when x = 0.04, the film Bi3.96Sb0.04Ti3O12 has achieved the max 2Pr value of 87μC/cm2. This film also has a better anti‐fatigue characteristic, which can be up to 1010 switching cycles without fatigue. The leakage current density improved with J = 8×10−8 A/cm2. Properties of Sb3+ substituted Bi4‐xSbxTi3O12 thin films was significantly improved compared to pure Bi4Ti3O12 film. It was noted that the most suitable Bi3+/Sb3+ ratio is 3.96/0.04. When x = 0.04, the film Bi3.96Sb0.04Ti3O12 endures 35V high voltage and 2Pr value reaches 87μC/cm2; it shows fatigue endurance up to more than 1010 switching cycles; the leakage current density is as low as 8×10−8 A/cm2.