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Metal-organic vapor phase epitaxial growth of cubic Gallium selenide, Ga2Se3

We present results of a study using metal‐organic vapor phase epitaxy (MOVPE) to synthesize thin films of cubic Ga2Se3 on both nearly lattice matched GaP and mismatched GaAs substrates. We find that trimethylgallium (TMGa) pre‐reacts with the hydride H2Se in the gas phase to yield films which are on...

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Bibliographic Details
Published in:Chemical vapor deposition 1996-09, Vol.2 (5), p.185-189
Main Authors: Ng, Tat Lin, Maung, Nicolas, Fan, Guanghan, Poole, Ian B., Williams, John O., Wright, Andrew C., Foster, Douglas F., Cole-Hamilton, David J.
Format: Article
Language:English
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Summary:We present results of a study using metal‐organic vapor phase epitaxy (MOVPE) to synthesize thin films of cubic Ga2Se3 on both nearly lattice matched GaP and mismatched GaAs substrates. We find that trimethylgallium (TMGa) pre‐reacts with the hydride H2Se in the gas phase to yield films which are only partially epitaxial and that the combination of TMGa with ditertiarybutylselenide produces films of the best crystal quality under steady state flow conditions. We also show that GaAs is an unsuitable substrate for MOVPE growth of gallium selenide due to exchange reactions at the interface leading to poorly bonded films. The first in‐depth study of the MOVPE of Ga2Se3 is reported. It is found that trimethylgallium (TMGa) pre‐reacts with the hydride H2Se in the gas phase to yield films which are only partially epitaxial and that combination of TMGa with ditertiarybutylselenide produces films of the best crystalline quality under steady state flow conditions. The Figure shows a cross‐sectional bright field image of epitaxial cubic Ga2Se3 on Gap.
ISSN:0948-1907
1521-3862
DOI:10.1002/cvde.19960020507