Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiNx‐Based Resistive Random Access Memory

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2019-11, Vol.216 (22), p.n/a
• Main Authors: Guo, Jingshu, Gao, Haixia, Jiang, Pengfei, Yang, Mei, Jiang, Xinzi, Zhang, Zhenfei, Ma, Xiaohua, Yang, Yintang
• Format: Article
• Language: English
• Subjects: devices; memory; multilayer; resistive random access; silicon nitride; Ta-doped
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201900540

The characteristics and conductive mechanism of Ta/SiNx/Ta:SiNx/SiNx/Pt resistive random access memory (RRAM) are investigated. Compared with Pt‐doped devices with the same structure, the Ta‐doped devices produce lower operation current in a high resistance state and a larger on/off radio. Furthermore, reliability tests show that the Ta‐doped RRAM has good data retention ability and endurance. Ta clusters are observed in the Ta‐doped SiNx layer through the transmission electron microscope. Also, the X‐ray photoelectron spectra indicate that additional Si dangling bonds and tantalum nitride are present in the Ta‐doped SiNx film. Based on the structure of the device, material analysis, and electrical characteristics, a model is proposed to explain the influence of the doped Ta on resistive switching behavior of the device. The characteristics and conductive mechanism of Ta/SiNx/Ta:SiNx/SiNx/Pt resistive random access memory (RRAM) are investigated. The doping of Ta successfully reduces the current level in a high resistance state and enlarges the on/off radio. The reason is analyzed by combining the X‐ray photoelectron spectroscopy (XPS) analysis and device structure. Finally, a model is proposed to explain the influence of the dopant.