In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy (Small 7/2022)

MoS2 Devices In article number 2106411, Wen‐Wei Wu and co‐workers reveal the direct observation of an MoS2 device under biasing via powerful in situ transmission electron microscopy (TEM). During in situ TEM biasing, the MoS2 is etched vertically and horizontally; the former is dominated by knock‐on...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2022-02, Vol.18 (7), p.n/a
Main Authors: Tseng, Yi‐Tang, Lu, Li‐Syuan, Shen, Fang‐Chun, Wang, Che‐Hung, Sung, Hsin‐Ya, Chang, Wen‐Hao, Wu, Wen‐Wei
Format: Article
Language:English
Subjects:
2D materials
high‐resolution TEM/STEM
in situ biasing
Joule heating
monolayer MoS 2
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Summary:MoS2 Devices In article number 2106411, Wen‐Wei Wu and co‐workers reveal the direct observation of an MoS2 device under biasing via powerful in situ transmission electron microscopy (TEM). During in situ TEM biasing, the MoS2 is etched vertically and horizontally; the former is dominated by knock‐on damage, while the latter involves atomic migration induced by Joule heating. Also, the long cracks that form by thermal stress, which are discovered in both in situ and ex situ biasing at 10 V, are discussed in this research. It is believed that insights of material damage can push the limit of material properties and broaden the range of MoS2‐based device applications.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.202270034