High‐Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells

Ultrathin Solar Cells In article number 2000534, José M. V. Cunha and co‐workers applied two SiOx passivation architectures in ultrathin CIGS solar cells. Both passivation approaches resulted in devices with a higher performance compared to a reference non‐passivated device. The potential to use SiO...

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Bibliographic Details
Published in:Solar RRL 2021-03, Vol.5 (3), p.n/a
Main Authors: Cunha, José M. V., Oliveira, Kevin, Lontchi, Jackson, Lopes, Tomás S., Curado, Marco A., Barbosa, João R. S., Vinhais, Carlos, Chen, Wei-Chao, Borme, Jérôme, Fonseca, Helder, Gaspar, João, Flandre, Denis, Edoff, Marika, Silva, Ana G., Teixeira, Jennifer P., Fernandes, Paulo A., Salomé, Pedro M. P.
Format: Article
Language:English
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Summary:Ultrathin Solar Cells In article number 2000534, José M. V. Cunha and co‐workers applied two SiOx passivation architectures in ultrathin CIGS solar cells. Both passivation approaches resulted in devices with a higher performance compared to a reference non‐passivated device. The potential to use SiOx as passivation material, deposited by a high throughput industrial technique based in microelectronics processing, yields promising results towards high‐performance low‐cost ultrathin CIGS solar cells.
ISSN:2367-198X
2367-198X
DOI:10.1002/solr.202170036