Simple scheme to increase hold voltage for silicon-controlled rectifier

A simple scheme is proposed to increase the hold voltage and not change the original trigger voltage of a silicon-controlled rectifier (SCR) to enhance its latch-up immunity without changing the device dimensions. It is found that using the lightly doped P-diffusion instead of the highly doped P+ di...

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Bibliographic Details
Published in:Electronics letters 2014-01, Vol.50 (3), p.200-202
Main Authors: Hung, Chung-Yu, Kao, Tzu-Cheng, Lee, Jian-Hsing, Gong, Jeng, Huang, Tsung-Yi, Su, Hung-Der, Chang, Kuo-Cheng, Huang, Chih-Fang, Lo, Kuo-Hsuan
Format: Article
Language:English
Subjects:
Applied sciences
Electrical engineering. Electrical power engineering
Electronics
Exact sciences and technology
highly doped P+ diffusion
hold voltage
latch‐up immunity enhancement
lightly doped P‐diffusion
Power electronics, energy conversion and sustainability
Power electronics, power supplies
SCR
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon‐controlled rectifier
thyristors
Transistors
trigger voltage
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Summary:A simple scheme is proposed to increase the hold voltage and not change the original trigger voltage of a silicon-controlled rectifier (SCR) to enhance its latch-up immunity without changing the device dimensions. It is found that using the lightly doped P-diffusion instead of the highly doped P+ diffusion as the P emitter of the anode can increase the hold voltage of an SCR.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2013.1853