Area-efficient high-voltage switch using floating control circuit for 3D ultrasound imaging systems

A high-voltage (HV) switch is proposed which adopts the floating control circuit to reduce area by removing the passive components and reducing the number of laterally diffused metal–oxide semiconductor field effects (LDMOSFETs). The proposed HV switch consists of three LDMOSFETs and three MOSFETs w...

Full description

Saved in:
Bibliographic Details
Published in:Electronics letters 2014-12, Vol.50 (25), p.1900-1902
Main Authors: Jung, Sung-Jin, Hong, Seong-Kwan, Kwon, Oh-Kyong
Format: Article
Language:English
Subjects:
3D ultrasound imaging system
area‐efficient high‐voltage switch
Arrays
Biomedical technology
Circuits
CMOS integrated circuits
CMOS process
Devices
FCC
floating control circuit
gain ‐53 dB
HV switch
laterally diffused metal‐oxide semiconductor field effect
LDMOSFET
Metal oxide semiconductors
MOSFET
MOSFETs
passive component
Passive components
routing complexity
Semiconductors
size 0.18 mum
Switches
switchgear
Three dimensional
ultrasonic imaging
voltage 50 V
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A high-voltage (HV) switch is proposed which adopts the floating control circuit to reduce area by removing the passive components and reducing the number of laterally diffused metal–oxide semiconductor field effects (LDMOSFETs). The proposed HV switch consists of three LDMOSFETs and three MOSFETs without any passive components. In addition, the routing complexity of the control signals is greatly reduced by sharing all control signals in the array of switches. The proposed HV switch is fabricated using a 0.18 μm CMOS process with 50 V devices and occupies 85 × 65 μm2. The measured off-isolation is −53 dB.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2014.1906