1–2 GHz 2 mW injection-locked ring oscillator based phase shifter in 0.18 µm CMOS technology

• Published in: Electronics letters 2016-10, Vol.52 (22), p.1858-1860
• Main Authors: Jin, Cai Long, Yu, Xiao Peng, Sui, Wen-Quan
• Format: Article
• Language: English
• Subjects: CMOS analogue integrated circuits; coarse phase delays; fine‐tuned phase delays; flexible phase delays; frequency 1 GHz to 2 GHz; injection locked oscillators; injection‐locked ring oscillator; Microwave technology; multistage phase generator; power 2 mW; RF CMOS process; size 0.18 mum; three‐stage phase shifter; UHF integrated circuits; UHF oscillators; UHF phase shifters; voltage 1.8 V; voltage‐controlled injection locking technique
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2016.2501

A new phase shifter based on injection-locked ring oscillator is proposed. By using a multi-stage phase generator with voltage-controlled injection locking technique, the proposed phase shifter is able to generate a flexible combination of coarse and fine-tuned phase delays over a wide range of operating frequencies while a small silicon area is maintained. Fabricated in a 0.18 µm RF CMOS process which only occupies 50 × 40 µm, a proposed three-stage phase shifter achieves flexible phase delays and a measured operating frequency up to 2 GHz with a maximum power consumption of 2 mW from a 1.8 V supply.