GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

• Published in: IET power electronics 2018-04, Vol.11 (4), p.689-694
• Main Authors: Nakajima, Akira, Kubota, Shunsuke, Tsutsui, Kazuo, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Iwai, Hiroshi, Nishizawa, Shin-ichi, Ohashi, Hiromichi
• Format: Article
• Language: English
• Subjects: 2D electron gas; 2DEG potential; 2DHG; complementary MOS inverter operation; drain currents; electron channels; gallium compounds; gallium nitride‐aluminium gallium nitride‐gallium nitride double heterostructure; gallium nitride‐based complementary metal‐oxide‐semiconductor inverter; III‐V semiconductors; MOSFET; normally off Nch MOSFET; normally off Pch MOSFET; N‐channel metal‐oxide‐semiconductor field‐effect transistors; on‐state resistance; polarisation‐induced holes; polarisation‐junction platform wafer; P‐channel metal‐oxide‐semiconductor field‐effect transistors; Special Issue: Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016); threshold gate voltages; threshold voltage; two‐dimensional electron gas; two‐dimensional hole gas; wide band gap semiconductors
• ISSN: 1755-4535; 1755-4543; 1755-4543
• DOI: 10.1049/iet-pel.2017.0376

Gallium nitride (GaN)-based P-channel (Pch) and N-channel (Nch) metal–oxide–semiconductor field-effect transistors (MOSFETs) with normally off operations were realised. Both Pch and Nch MOSFETs were monolithically fabricated in a polarisation-junction platform wafer. The platform wafer was constructed with a GaN/aluminium GaN/GaN double heterostructure, which has both two-dimensional hole gas (2DHG) and 2D electron gas (2DEG). The drain currents of Pch and Nch MOSFETs flow through 2DHG and 2DEG, respectively. The threshold gate voltages of the fabricated Pch and Nch MOSFETs were −2.7 and 6.7 V, respectively. It was shown that the threshold voltage and the on-state resistance of the Pch MOSFET can be controlled by adjusting the 2DEG potential. Furthermore, using Pch and Nch MOSFETs, complementary MOS inverter operation was demonstrated.