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Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHz

A silicon-based phased-array transmitter working at 100 GHz is proposed in this study. Planar array ferroelectric film phase shifters (FPSs) are realised with patch antennas, DC bias lines, microstrip lines and power dividers on a monolithic silicon substrate. The system enables full process compati...

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Published in:Journal of engineering (Stevenage, England) England), 2019-10, Vol.2019 (19), p.6231-6234
Main Authors: Liu, Jingtian, Chen, Shuming, Huang, Hui, Xiao, Ke, Chen, Xiaowen
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Language:English
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cited_by cdi_FETCH-LOGICAL-c2981-16bf2ddf292d6c729538077982dc308fbfc429f0be7ed3156595e3986587d89e3
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container_end_page 6234
container_issue 19
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container_title Journal of engineering (Stevenage, England)
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creator Liu, Jingtian
Chen, Shuming
Huang, Hui
Xiao, Ke
Chen, Xiaowen
description A silicon-based phased-array transmitter working at 100 GHz is proposed in this study. Planar array ferroelectric film phase shifters (FPSs) are realised with patch antennas, DC bias lines, microstrip lines and power dividers on a monolithic silicon substrate. The system enables full process compatibility and avoids loss caused by multichip interconnection. The isolation layer uses benzocyclobutene polymer film with low permittivity and low loss tangent, providing large thickness physical isolation. The FPS has a compact length of 0.45 mm, and simulation results show that its phase shift degree at 100 GHz is 125.7° with 3.95 dB insertion loss and 11.4 dB reflection loss. The patch antenna shows that the maximum simulated radiation gain of the single antenna is 4 dBi and the four-element antenna array is 9.7 dBi at 100 GHz. The beam can be steered to ±10°. The proposed system lays an important foundation for the realisation of silicon-based system-on-chip radar RF front-end system.
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Planar array ferroelectric film phase shifters (FPSs) are realised with patch antennas, DC bias lines, microstrip lines and power dividers on a monolithic silicon substrate. The system enables full process compatibility and avoids loss caused by multichip interconnection. The isolation layer uses benzocyclobutene polymer film with low permittivity and low loss tangent, providing large thickness physical isolation. The FPS has a compact length of 0.45 mm, and simulation results show that its phase shift degree at 100 GHz is 125.7° with 3.95 dB insertion loss and 11.4 dB reflection loss. The patch antenna shows that the maximum simulated radiation gain of the single antenna is 4 dBi and the four-element antenna array is 9.7 dBi at 100 GHz. The beam can be steered to ±10°. 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ispartof Journal of engineering (Stevenage, England), 2019-10, Vol.2019 (19), p.6231-6234
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2051-3305
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source IET Digital Library; Wiley Open Access
subjects antenna phased arrays
benzocyclobutene polymer film
DC bias lines
ferroelectric devices
ferroelectric film phase shifters
ferroelectric thin film
ferroelectric thin films
four-element antenna array
frequency 100.0 GHz
frequency 100.0 GHz
IET International Radar Conference (IRC 2018)
loss 3.95 dB
loss 3.95 dB
low loss tangent polymer film
low permittivity polymer film
microstrip antenna arrays
microstrip antennas
microstrip lines
microwave integrated circuits
microwave phase shifters
millimetre wave antenna arrays
millimetre wave radar
monolithic silicon substrate
patch antennas
permittivity
phase shifters
phased array radar
planar array ferroelectric film phase shifters
polymer films
power dividers
radar transmitters
silicon
silicon-based on-chip four-channel phased-array radar transmitter
silicon-based phased-array transmitter
silicon-based system-on-chip radar RF front-end system
size 0.45 mm
size 0.45 mm
system-on-chip
title Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHz
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