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The Effects of Annealing Atmosphere on the Electrical Properties of MgNb2O6/ITO Heterostructures

The effects of annealing atmosphere (N2, air and O2) on the electrical properties of sol–gel‐derived MgNb2O6/ITO heterostructures are discussed in this work. All samples exhibited the amorphous phase and were highly transparent. The percentage of Nb4+ content increased when the films were annealed i...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2015-02, Vol.98 (2), p.580-586
Main Authors: Ho, Yi-Da, Chen, Kung-Rong, Yu, Pei-Ching, Huang, Cheng-Liang
Format: Article
Language:English
Online Access:Get full text
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Summary:The effects of annealing atmosphere (N2, air and O2) on the electrical properties of sol–gel‐derived MgNb2O6/ITO heterostructures are discussed in this work. All samples exhibited the amorphous phase and were highly transparent. The percentage of Nb4+ content increased when the films were annealed in the oxygen‐deficient conditions, which could lead to semiconducting films. In addition, the results show that the electrical properties of sol–gel‐derived MgNb2O6 thin films could be tuned based on the annealing atmosphere. Moreover, the conduction mechanisms of MgNb2O6/ITO heterostructures are also discussed in this study. The results show that MgNb2O6 thin films have potential for use in multifunctional optoelectronic applications, due to their flexible electrical properties and good transparency.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.13340