Comprehensive study of electronic polarizability and band gap of B2O3–Bi2O3–ZnO–SiO2 glass network

• Published in: Journal of advanced dielectrics 2017-10, Vol.7 (5), p.1750031-1-1750031-7
• Main Authors: Mustafa, Iskandar Shahrim, Razali, Nur Ain Nabilah, Azman, Nurul Zahirah Noor, Yahaya, Nor Zakiah, Zaini, Muhammad Zulhafiz Mohamad, Rusli, Nur Lina, Nizamani, Muhammad Bakhsh, Kamari, Halimah Mohamed
• Format: Article
• Language: English
• Subjects: Band gap; Bismuth oxides; Bismuth trioxide; Boron oxides; Chemical composition; Chemical compounds; energy band gap; Energy gap; Glass; Lorentz–Lorentz; Optical basicity; optical polarizability; Organic chemistry; Silicon dioxide; Urbach energy; X-ray powder diffraction; Zinc oxide
• ISSN: 2010-135X; 2010-1368
• DOI: 10.1142/S2010135X1750031X

Quaternary glasses were successfully fabricated using melt quenching technique based on the chemical compound composition ( x )Bi2O3–( 0 . 5 − x ) ZnO–(0.2)B2O3–(0.3)SiO2, where ( x = 0 . 1 , 0.2, 0.3, 0.4, 0.45) mole. The sources of SiO2 was produced from rice husk ash (RHA) at 99.36% of SiO2. The Urbach energy was increased from 0.16 eV to the 0.29 eV as the mole of Bi2O3 increased in the glass structure. The indirect energy band gap is indicated in decrement pattern with 3.15 eV towards 2.51 eV. The results of Urbach energy and band gap energy that were obtained are due to the increment of Bi 3 + ion in the glass network. The refractive indexes for the prepared glasses were evaluated at 2.36 to 2.54 based on the Lorentz–Lorentz formulation which correlated to the energy band gap. The calculated of molar polarizability, electronic polarizability and optical basicity exemplify fine complement to the Bi2O3 addition in the glass network. The glass sample was indicated in amorphous state.