ELECTRONIC TRANSPORT MECHANISM IN YMn0.8Ru0.2O3 COMPOUND

A single phase polycrystalline hexagonal YMn0.8Ru0.2O3 compound with space group P63cm (25-1079) have been synthesized by using solid state reaction method at sintering temperature 1280°C. The detailed low temperature electrical properties were evaluated over a broad range of temperature. The temper...

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Bibliographic Details
Main Authors: THAKUR, RAJESH K., THAKUR, RASNA, MODI, ANCHIT, KAURAV, N., OKRAM, G. S., GAUR, N.K.
Format: Conference Proceeding
Language:English
Subjects:
Chemical synthesis
Conduction model
Electrical properties
Electron transport
H- Miscellaneous
Hopping conduction
Temperature dependence
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Summary:A single phase polycrystalline hexagonal YMn0.8Ru0.2O3 compound with space group P63cm (25-1079) have been synthesized by using solid state reaction method at sintering temperature 1280°C. The detailed low temperature electrical properties were evaluated over a broad range of temperature. The temperature dependence of the dc resistivity at low temperature reveals the semiconducting behavior and favored the variable range hopping conduction model. The obtained experimental data in the temperature range of our study can be described by the equation ρ(T) = ρ0exp[(T*/T)1/4]. The fitting results are used for the calculation of the ;temperature scale T* ~ 1.05 × 106K and finally the density of state at Fermi level N(EF) is calculated to be ~ 5.6 × 1019 eV−1 cm−3.
ISSN:2010-1945
2010-1945
DOI:10.1142/S2010194513010763