Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features

Vertical scaling technique faces a physical limitation in 3D NAND device fabrication, even assuming superior etching technology. Another promising scaling technique to increase the storage density is lateral scaling, which increases the number of holes between slit and slit from four to nine and abo...

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Bibliographic Details
Main Authors: Hyoungcheol Kwon, Imhee Won, Songhee Han, Dong-Hun Yu, Deuk-Chul Kwon, Yeon Ho Im, Felipe Iza, Dongyean Oh, Sung-Kye Park, Seonyong Cha
Format: Default Article
Published: 2022
Subjects:
Physical sciences
Classical physics
Science & Technology
Physical Sciences
Physics, Fluids & Plasmas
Physics
Fluids & Plasmas
Online Access:https://hdl.handle.net/2134/22226518.v1
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https://hdl.handle.net/2134/22226518.v1

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