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A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
Insights into the fundamental properties of graphene’s Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Default Article |
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2023
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| Online Access: | https://hdl.handle.net/2134/23613018.v1 |
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| _version_ | 1818165316595744768 |
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| author | Evgenii E Vdovin Mark Greenaway Yurii N Khanin Sergey V Morozov Oleg Makarovsky Amalia Patanè Artem Mishchenko Sergey Slizovskiy Vladimir I Fal’ko Andre K Geim Kostya S Novoselov Laurence Eaves |
| author_facet | Evgenii E Vdovin Mark Greenaway Yurii N Khanin Sergey V Morozov Oleg Makarovsky Amalia Patanè Artem Mishchenko Sergey Slizovskiy Vladimir I Fal’ko Andre K Geim Kostya S Novoselov Laurence Eaves |
| author_sort | Evgenii E Vdovin (16477800) |
| collection | Figshare |
| description | Insights into the fundamental properties of graphene’s Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of ~2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions. |
| format | Default Article |
| id | rr-article-23613018 |
| institution | Loughborough University |
| publishDate | 2023 |
| record_format | Figshare |
| spelling | rr-article-236130182023-06-30T00:00:00Z A magnetically-induced Coulomb gap in graphene due to electron-electron interactions Evgenii E Vdovin (16477800) Mark Greenaway (3135495) Yurii N Khanin (16477803) Sergey V Morozov (16477806) Oleg Makarovsky (2303236) Amalia Patanè (8372673) Artem Mishchenko (1341228) Sergey Slizovskiy (4725861) Vladimir I Fal’ko (12784964) Andre K Geim (16477809) Kostya S Novoselov (14415126) Laurence Eaves (4677826) Electronic and spintronic devices Electronic properties and devices Electronic properties and materials <p>Insights into the fundamental properties of graphene’s Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of ~2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.</p> 2023-06-30T00:00:00Z Text Journal contribution 2134/23613018.v1 https://figshare.com/articles/journal_contribution/A_magnetically-induced_Coulomb_gap_in_graphene_due_to_electron-electron_interactions/23613018 CC BY 4.0 |
| spellingShingle | Electronic and spintronic devices Electronic properties and devices Electronic properties and materials Evgenii E Vdovin Mark Greenaway Yurii N Khanin Sergey V Morozov Oleg Makarovsky Amalia Patanè Artem Mishchenko Sergey Slizovskiy Vladimir I Fal’ko Andre K Geim Kostya S Novoselov Laurence Eaves A magnetically-induced Coulomb gap in graphene due to electron-electron interactions |
| title | A magnetically-induced Coulomb gap in graphene due to electron-electron interactions |
| title_full | A magnetically-induced Coulomb gap in graphene due to electron-electron interactions |
| title_fullStr | A magnetically-induced Coulomb gap in graphene due to electron-electron interactions |
| title_full_unstemmed | A magnetically-induced Coulomb gap in graphene due to electron-electron interactions |
| title_short | A magnetically-induced Coulomb gap in graphene due to electron-electron interactions |
| title_sort | magnetically-induced coulomb gap in graphene due to electron-electron interactions |
| topic | Electronic and spintronic devices Electronic properties and devices Electronic properties and materials |
| url | https://hdl.handle.net/2134/23613018.v1 |