Global transition path search for dislocation formation in Ge on Si(001)

© 2016 Elsevier B.V.Global optimization of transition paths in complex atomic scale systems is addressed in the context of misfit dislocation formation in a strained Ge film on Si(001). Such paths contain multiple intermediate minima connected by minimum energy paths on the energy surface emerging f...

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Bibliographic Details
Main Authors: E. Maras, O. Trushin, A. Stukowski, Tapio Ala-Nissila, Hannes Jonsson
Format: Default Article
Published: 2016
Subjects:
Other mathematical sciences not elsewhere classified
Dislocation nucleation
Global optimization of transition path
Germanium on silicon
Diamond structure identification
Mathematical Sciences not elsewhere classified
Online Access:https://hdl.handle.net/2134/28198
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https://hdl.handle.net/2134/28198

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