Modeling A-Si module ageing using the concept of environmental dose

This paper investigates ageing of a-Si devices using indoor controlled irradiance and temperature stresses testing. Device maximum power degradation is analyzed against the proposed environmental dose, which is derived from the microscopic model of defects generation and annealing of a-Si material....

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Bibliographic Details
Main Authors: Jiang Zhu, Martin Bliss, Tom Betts, Ralph Gottschalg
Format: Default Conference proceeding
Published: 2013
Subjects:
Mechanical engineering not elsewhere classified
Amorphous silicon
Ageing
Reliability
Environmental dose
Arrhenius
Modeling
Mechanical Engineering not elsewhere classified
Online Access:https://hdl.handle.net/2134/14224
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