Deformation mechanisms in 6H silicon carbide: experimental and numerical analysis

This research aims at developing a fundamental understanding of the deformation mechanisms in single crystal 6H silicon carbide (6H-SiC). Owing to the continuous miniaturization of electronics devices, silicon carbide (SiC) continues to be of exceptional interest to the electronic industries. It is...

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Bibliographic Details

Main Author:	Xavier Pang
Format:	Default Thesis
Published:	2018
Subjects:	Mechanical engineering not elsewhere classified Silicon carbide Crystal plasticity Nanoindentation Nanoscratching Mechanical Engineering not elsewhere classified
Online Access:	https://hdl.handle.net/2134/37270
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