Enhancing the Photoluminescence of Monolayer MoS2 through Gap-Assisted Synthesis at a Wafer-Scale

• Published in: Journal of physical chemistry. C 2022-07, Vol.126 (27), p.11201-11208
• Main Authors: Chiu, Sheng-Kuei, Huang, Xiu-Yu, Peng, Cheng-Chi, Yang, Zhi-Chao, Cheng, Yaw-Yeu, Hu, Shih-Hsien, Chiu, Chun-Lin, Chan, Chia-Wei, Chen, Shu-Han
• Format: Article
• Language: eng ; jpn
• Subjects: C: Spectroscopy and Dynamics of Nano, Hybrid, and Low-Dimensional Materials
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/acs.jpcc.2c02547

2D nanomaterials have attracted the attention of many researchers for advanced electronic and optoelectronic devices. Transition metal dichalcogenides (TMDs), such as MoS2, have been studied actively due to their unique chemical and physical properties as a new generation of electronic devices. However, the mechanism for self-limited monolayer growth of a 2D TMDs material is still poorly understood. This work fabricated about 490 cm2 area of monolayer MoS2 via face-to-face stacking chemical vapor deposition (CVD) synthesis. As the growth space changes, either nucleation or grain growth can be promoted. The 200 μm gap between the metal oxide film and the Si wafer substrate gives the best stacking setup for high-quality, high-uniformity, and 7 times photoluminescence intensity-enhanced (compared to the reactant powder CVD MoS2 growth method) monolayer MoS2 nanomaterial fabrication. Our results provide an innovative CVD process for the mass production-scale synthesis of monolayer MoS2 and other 2D TMDs materials for optoelectronic applications in the semiconductor manufacturing field.