Vacancy Manipulation for Thermoelectric Enhancements in GeTe Alloys
Optimization of carrier concentration plays an important role on maximizing thermoelectric performance. Existing efforts mainly focus on aliovalent doping, while intrinsic defects (e.g., vacancies) provide extra possibilities. Thermoelectric GeTe intrinsically forms in off-stoichiometric with Ge-vac...
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| Published in: | Journal of the American Chemical Society 2018-11, Vol.140 (46), p.15883-15888 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
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