AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MIS-HEMT） with an NbAIO high-k dielectric deposited by atomic layer deposition （ALD）. Surface morphology of samples are observed by atomic force microscopy （AFM）, indicating that the ALD NbA10 has an excellent-p...

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Bibliographic Details
Published in:Chinese physics B 2010-07, Vol.19 (7), p.513-517
Main Author: 毕志伟 冯倩 郝跃 王党会 马晓华 张进成 全思 许晟瑞
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Atomic force microscopy
Deposition
Dielectrics
Gallium nitrides
Gates
HEMT器件
High electron mobility transistors
MIS
Semiconductor devices
介电层
原子层沉积
氮化铝
氮化镓
高电子迁移率晶体管
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Summary:We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MIS-HEMT） with an NbAIO high-k dielectric deposited by atomic layer deposition （ALD）. Surface morphology of samples are observed by atomic force microscopy （AFM）, indicating that the ALD NbA10 has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance voltage （C-V）curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbA10 on A1GaN. The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbA10 can be considered to be a potential gate oxide comparable to other dielectric insulators.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/7/077303