Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

• Published in: Chinese physics B 2010-10, Vol.19 (10), p.380-385
• Main Author: Tang Hai-Ma Zheng Zhong-Shan Zhang En-Xia Yu Fang Li Ning Wang Ning-Juan
• Format: Article
• Language: English
• Subjects: 埋氧层; 总剂量辐射; 氮注入; 氮离子注入; 硅绝缘体; 红外光谱技术
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/19/10/106106

In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon- on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 1016 cm-2, and subsequent annealing was performed at 1100 ℃. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad（Si） irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.