Influence of Rapid Thermal Annealing on the Structure and Electrical Properties of Ce-Doped HfO2 Gate Dielectric

Ce-doped Hf02 （HfCeO） films are prepared by radio-frequency magnetron sputtering. The influences of rapid thermal annealing on the structure and electrical properties of HfCeO films are investigated. The results show that the incorporation of Ce into Hf02 increases the crystallization temperature of...

Full description

Saved in:
Bibliographic Details
Published in:中国物理快报：英文版 2014-07 (7), p.176-178
Main Author: 孟永强 刘正堂 冯丽萍 陈帅
Format: Article
Language:English
Subjects:
Ce掺杂
HfO2
快速热退火
有效介电常数
栅介质
电气性能
结构
退火温度
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ce-doped Hf02 （HfCeO） films are prepared by radio-frequency magnetron sputtering. The influences of rapid thermal annealing on the structure and electrical properties of HfCeO films are investigated. The results show that the incorporation of Ce into Hf02 increases the crystallization temperature of Hf02, and the cubic phase of Hf02 can be stabilized by incorporating Ce into Hf02. After high temperature annealing, Hf 4f core level spectra shift to a higher energy, whereas O 1s core level spectra shift to a lower energy. With increasing annealing temperatures, the effective permittivity increases, whereas the flat-band voltage shift and effective oxide charge density decrease. Moreover, the leakage current density of the HfCeO films decreases initially, and then increases as the annealing temperature increases.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/7/077702