Ballistic InAs Nanowire Transistors

Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as ∼150 nm. The mean free path is found to be independent of tempe...

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Bibliographic Details
Published in:Nano letters 2013-02, Vol.13 (2), p.555-558
Main Authors: Chuang, Steven, Gao, Qun, Kapadia, Rehan, Ford, Alexandra C, Guo, Jing, Javey, Ali
Format: Article
Language:English
Subjects:
Applied sciences
Arsenicals - chemistry
Channels
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Electronics
Exact sciences and technology
Indium - chemistry
Indium arsenides
Mathematical models
Mean free path
Molecular electronics, nanoelectronics
Nanowires
Nanowires - chemistry
Physics
Scattering
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Transistors
Transistors, Electronic
Transport
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