Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

2D ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain-tunable ferroelectric properties of group-IV monochalcogenides MX ( M = Ge, Sn; X = S, Se) and their potential application in lateral field tunnel junction devices. We find that these monol...

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Bibliographic Details
Published in:Journal of applied physics 2022-01, Vol.131 (3)
Main Authors: Priydarshi, Achintya, Chauhan, Yogesh Singh, Bhowmick, Somnath, Agarwal, Amit
Format: Article
Language:English
Subjects:
Ferroelectric materials
Ferroelectricity
Germanium
Germanium sulfide
Memory devices
Monolayers
Parameters
Tensile strain
Tin
Tunnel junctions
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