First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi2(111)/Si(111) interfaces

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Bibliographic Details
Published in:Physical review. B 2024-07, Vol.110 (3), Article 035302
Main Authors: Nangoi, J. K., Palmstrøm, C. J., Van de Walle, C. G.
Format: Article
Language:English
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