Determining Strain, Chemical Composition, and Thermal Properties of Si/SiGe Nanostructures Via Raman Scattering Spectroscopy

Studies by Raman spectroscopy of two kinds of Si/SiGe nanostructures-quantum dot multilayers and planar superlattices-reveal a wide variety of spectral features including first- and second-order Raman scattering, polarized Raman scattering, and low-frequency inelastic light scattering associated wit...

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Bibliographic Details
Published in:ECS transactions 2018-01, Vol.86 (1), p.99-113, Article 99
Main Authors: Tsybeskov, Leonid, Mala, Selina A., Wang, Xaolu, Baribeau, Jean-Marc, Wu, Xiaohua, Lockwood, David J
Format: Article
Language:English
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Summary:Studies by Raman spectroscopy of two kinds of Si/SiGe nanostructures-quantum dot multilayers and planar superlattices-reveal a wide variety of spectral features including first- and second-order Raman scattering, polarized Raman scattering, and low-frequency inelastic light scattering associated with folded acoustic phonons. Here we overview how such features can be employed to semi-quantitatively analyze the strain, chemical composition, and thermal conductivity in these industrially important materials that are widely used for producing electronic and optoelectronic devices.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/08601.0099ecst