Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center

The optically active carbon related G‐center is attracting great interest because of evidence that it can provide lasing in silicon. Here a technique to form the G‐center in silicon is reported. The carbon G‐center is generated by implantation of carbon followed by proton irradiation. Photoluminesce...

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Bibliographic Details
Published in:Advanced functional materials 2012-07, Vol.22 (13), p.2709-2712
Main Authors: Berhanuddin, Dilla D., Lourenço, Manon A., Gwilliam, Russell M., Homewood, Kevin P.
Format: Article
Language:English
Subjects:
optically active materials
photoluminescence
photonics
semiconductors
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Summary:The optically active carbon related G‐center is attracting great interest because of evidence that it can provide lasing in silicon. Here a technique to form the G‐center in silicon is reported. The carbon G‐center is generated by implantation of carbon followed by proton irradiation. Photoluminescence measurements confirm the controlled formation of high levels of the G‐center that, importantly, completely dominates the emission spectrum. Unlike previous methods of introducing the G‐center the current approach significantly is truly fully compatible with standard silicon ULSI (ultralarge scale integration) technology. The optically active carbon related G‐center can provide lasing in silicon. A technique to form the G‐center that, unlike previous methods, is fully compatible with standard silicon device technology is reported. It is generated by implantation of carbon followed by proton irradiation. Photoluminescence measurements confirm the controlled formation of high levels of the G‐center, which completely dominates the emission spectrum.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201103034