Strong Substrate Influence on Atomic Structure and Properties of Epitaxial VO 2 Thin Films

• Published in: Advanced materials interfaces 2024-01, Vol.11 (3)
• Main Authors: Atul, Atul, Ahmadi, Majid, Koutsogiannis, Panagiotis, Zhang, Heng, Kooi, Bart J.
• Format: Article
• Language: English
• ISSN: 2196-7350; 2196-7350
• DOI: 10.1002/admi.202300639

The metal–insulator transition (MIT) observed in vanadium dioxide has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and structures involved. The ability to understand and tune the MIT behavior is of vital importance from the perspective of both underlying fundamental science as well as potential applications. In this work, scanning transmission electron microscopy (STEM) is used to investigate cross‐section lamella of the VO 2 films deposited using pulsed laser deposition on three substrates: c‐cut sapphire, TiO 2 (101) and TiO 2 (001). Advanced STEM imaging is performed in which also the oxygen atom columns are resolved. The overall film quality and structures on atomic and nanoscale are linked to the electrical transition characteristics. Relatively poor MIT characteristics are observed on c‐sapphire due to the presence of very small domains with six orientation variants, and on TiO 2 (001) due to the presence of cracks induced by stress relaxation. However, the MIT on TiO 2 (101) behaves favorably, despite similar stress relaxation which, however, only leads to domain boundaries but no cracks.