Crystal Growth by Unidirectional Method ‐ A Generalized View on the Crystalline Perfection of the Uni‐Indexed, Bi‐Indexed, and Tri‐Indexed Plane Single Crystals

• Published in: Crystal research and technology (1979) 2023-12, Vol.58 (12), p.n/a
• Main Authors: Aswathppa, Sivakumar, Sathiyadhas, Sahaya Jude Dhas, Muthuvel, V., Dai, Lidong, Sathiyadhas Amalapushpam, Martin Britto Dhas
• Format: Article
• Language: English
• Subjects: degree of crystalline nature; directional solidification; growth from solutions; single crystal growth, X‐ray diffraction
• ISSN: 0232-1300; 1521-4079
• DOI: 10.1002/crat.202300193

In this article of generalized view, a comparison of the long‐range order crystalline perfection of crystals is made with respect to their planes grown by the unidirectional growth technique. Based on the obtained results, it is established that the uni‐indexed grown crystals yield a high degree of crystalline perfection and to a certain extent the bi‐indexed crystals, but tri‐indexed crystals grow with higher lattice disorders. Herein, uni‐indexed crystal means the crystal grown along a plane has only one integer out of the h, k, and l whereas the other values are zero [e.g., (100), (010), (001)]. Bi‐indexed crystal means the crystal grown along a plane has integers for any two of the h, k, and l but the remaining value is zero [e.g., (110), (011), (101)]. Tri‐indexed crystal means the crystal grown along the plane has integers for all the values of h, k, and l [e.g., (111)]. In SR crystal growth technique, uni‐indexed plane crystals (Ex:100), (010), and (001) are the best choice to grow a high degree of crystalline material compared to the bi‐indexed and tri‐indexed crystals. On the other hand, the slow evaporation technique can be considered as an apt method to harvest tri‐indexed crystals of a good crystalline nature.