Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200 mm‐Diameter Wafers

Localized epitaxy of gallium nitride (GaN) on silicon (Si) wafers is an efficient way to relax elastically the tensile stress generated in the GaN layer after growth, allowing epitaxy of thick layers for the fabrication of vertical power devices operating at high voltage. In this study, a 4.7 μm‐thi...

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Published in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2024-11, Vol.221 (21), p.n/a
Main Authors:	Kaltsounis, Thomas, El Amrani, Mohammed, Plaza Arguello, David, El Rammouz, Hala, Maurya, Vishwajeet, Lafossas, Matthieu, Torrengo, Simona, Haas, Helge, Mendizabal, Laurent, Gueugnot, Alain, Mariolle, Denis, Jalabert, Thomas, Buckley, Julien, Cordier, Yvon, Charles, Matthew
Format:	Article
Language:	English
Subjects:	Electronics Engineering Sciences GaN‐on‐Si localized epitaxy Mechanics Physics quasi‐vertical diode scanning capacitance microscopy scanning spreading resistance microscopy Solid mechanics
Citations:	Items that this one cites
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