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Rational Engineering of p-n Heterogeneous ZnS/SnO 2 Quantum Dots with Fast Ion Kinetics for Superior Li/Na-Ion Battery
Constructing heterogeneous nanostructures is an efficient strategy to improve the electrical and ionic conductivity of metal chalcogenide-based anodes. Herein, ZnS/SnO quantum dots (QDs) as p-n heterojunctions that are uniformly anchored to reduced graphene oxides (ZnS-SnO @rGO) are designed and eng...
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Published in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2023-10, Vol.19 (43), p.e2300534 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Constructing heterogeneous nanostructures is an efficient strategy to improve the electrical and ionic conductivity of metal chalcogenide-based anodes. Herein, ZnS/SnO
quantum dots (QDs) as p-n heterojunctions that are uniformly anchored to reduced graphene oxides (ZnS-SnO
@rGO) are designed and engineered. Combining the merits of fast electron transport via the internal electric field and a greatly shortened Li/Na ion diffusion pathway in the ZnS/SnO
QDs (3-5 nm), along with the excellent electrical conductivity and good structural stability provided by the rGO matrix, the ZnS-SnO
@rGO anode exhibits enhanced electronic and ionic conductivity, which can be proved by both experiments and theoretical calculations. Consequently, the ZnS-SnO
@rGO anode shows a significantly improved rate performance that simple counterpart composite anodes cannot achieve. Specifically, high reversible specific capacities are achieved for both lithium-ion battery (551 mA h g
at 5.0 A g
, 670 mA h g
at 3.0 A g
after 1400 cycles) and sodium-ion battery (334 mA h g
at 5.0 A g
, 313 mA h g
at 1.0 A g
after 400 cycles). Thus, this strategy to build semiconductor metal sulfides/metal oxide heterostructures at the atomic scale may inspire the rational design of metal compounds for high-performance battery applications. |
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ISSN: | 1613-6810 1613-6829 |
DOI: | 10.1002/smll.202300534 |