Enhancing Thermoelectric Performance in P-Type Sb 2 Te 3 -Based Compounds Through Nb─Ag Co-Doping with Donor-Like Effect

• Published in: Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-03, Vol.20 (12), p.e2307798
• Main Authors: Yang, Wenwei, Le, Wenkai, Lyu, Jingyi, Li, Jingfeng, Chen, Zhixing, Zhang, Qian, Liu, Shenghua, Li, Xiangguo, Shuai, Jing
• Format: Article
• Language: English
• ISSN: 1613-6810; 1613-6829
• DOI: 10.1002/smll.202307798

P-type Sb Te has been recognized as a potential thermoelectric material for applications in low-medium temperature ranges. However, its inherent high carrier concentration and lattice thermal conductivity led to a relatively low ZT value, particularly around room temperature. This study addresses these limitations by leveraging high-energy ball milling and rapid hot-pressing techniques to substantially enhance the Seebeck coefficient and power factor of Sb Te , yielding a remarkable ZT value of 0.55 at 323 K due to the donor-like effect. Furthermore, the incorporation of Nb─Ag co-doping increases hole concentration, effectively suppressing intrinsic excitations ≈548 K while maintaining the favorable power factor. Simultaneously, the lattice thermal conductivity can be significantly reduced upon doping. As a result, the ZT values of Sb Te -based materials attain an impressive range of 0.5-0.6 at 323 K, representing an almost 100% improvement compared to previous research endeavors. Finally, the ZT value of Sb Nb Ag Te escalates to 0.92 at 548 K with a record average ZT value (ZT ) of 0.75 within the temperature range of 323-573 K. These achievements hold promising implications for advancing the viability of V-VI commercialized materials for low-medium temperature application.