Loading…

Trifluoromethylsulfonyl-Based Salts of BEDT-TTF: Crystal and Electronic Structures and Physical Properties11

Three 2 : 1 salts of the organic donor molecule bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF or ET) with trifluoromethylsulfonyl-based anions N(SO 2CF 3) 2 −, CH(SO 2CF 3) 2 − and C(SO 2CF 3) 3 − were prepared by electrocrystallization. These salts were characterized by single-crystal X-ray diffr...

Full description

Saved in:
Bibliographic Details
Published in:Journal of solid state chemistry 2002-11, Vol.168 (2), p.524-534
Main Authors: Schlueter, John A., Geiser, Urs, Wang, H.Hau, Kini, Aravinda M., Ward, Brian H., Parakka, James P., Daugherty, Roxanne G., Kelly, Margaret E., Nixon, Paul G., Winter, Rolf W., Gard, Gary L., Montgomery, Lawrence K., Koo, H.-J., Whangbo, M.-H.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Three 2 : 1 salts of the organic donor molecule bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF or ET) with trifluoromethylsulfonyl-based anions N(SO 2CF 3) 2 −, CH(SO 2CF 3) 2 − and C(SO 2CF 3) 3 − were prepared by electrocrystallization. These salts were characterized by single-crystal X-ray diffraction, electron spin resonance (ESR) spectroscopy, electrical resistivity measurements and electronic band structure calculations. (ET) 2N(SO 2CF 3) 2 is a two-dimensional (2D) metal, but its ESR spin susceptibility above 150 K shows a weakly semiconducting behavior, presumably because during ESR measurements the sample cooling rate is slow hence allowing the disordered anions to readjust their positions. (ET) 2CH (SO 2CF 3) 2 is a 2D metal and undergoes a metal-to-insulator (MI) transition at 110 K due probably to a geometry change of the donor molecule layers. (ET) 2C(SO 2CF 3) 3 is a one-dimensional (1D) metal and undergoes an MI between 180 and 240 K, which is expected to be of charge density wave type.
ISSN:0022-4596
1095-726X
DOI:10.1006/jssc.2002.9750