SiO2and Si nanoscale patterning with an atomic force microscope

The use of an atomic force microscope (AFM) as a nanolithographic tool is demonstrated. A photoresist layer several nanometre thin isindented by the vibrating AFM tip, where software control switches the tapping force from the imaging to the patterning mode. The resist pattern is transferred into a...

Full description

Saved in:
Bibliographic Details
Published in:Superlattices and microstructures 1998-02, Vol.23 (2), p.441-444
Main Authors: Klehn, B., Kunze, U.
Format: Article
Language:English
Subjects:
nanolithographic, atomic force microscope
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The use of an atomic force microscope (AFM) as a nanolithographic tool is demonstrated. A photoresist layer several nanometre thin isindented by the vibrating AFM tip, where software control switches the tapping force from the imaging to the patterning mode. The resist pattern is transferred into a 10 nm SiO2layer on Si(100) by wet chemical etching resulting in 20–40 nm wide lines. Subsequent transfer into the Si substrate using anisotropic KOH etching formed 60 nm wide V grooves.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1996.0358