Performance Limits of III–V Barrier Detectors

• Published in: Journal of electronic materials 2020-11, Vol.49 (11), p.6893-6899
• Main Authors: Klipstein, P. C., Benny, Y., Cohen, Y., Fraenkel, N., Gliksman, S., Glozman, A., Hirsh, I., Langof, L., Lukomsky, I., Marderfeld, I., Milgrom, B., Nitzani, M., Rakhmilevich, D., Shkedy, L., Snapi, N., Shtrichman, I., Weiss, E., Yaron, N.
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Solid State Physics; Topical Collection: U.S. Workshop on Physics and Chemistry of II-VI Materials 2019; U.S. Workshop on Physics and Chemistry of II-VI Materials 2019
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-020-08195-7

Minority-carrier lifetimes and diffusion lengths have been deduced from a comparison of band structure simulations and experimental measurements on mid-wave infrared InAsSb XB n and long-wave infrared InAs/GaSb type II superlattice (T2SL) XB p barrier detectors with low diffusion-limited dark current close to mercury cadmium telluride Rule 07 and high quantum efficiency. For the XB n devices, a lifetime of 1.9  μ s was observed with a corresponding diffusion length of 14.5  μ m. In contrast, the T2SL exhibited a much shorter lifetime of 7.5 ns, but the diffusion length of ∼ 7  μ m was long enough to ensure that almost 90% of the photocarriers are collected. The lifetime appears to be Auger limited in the case of n -type InAsSb, but for the p -type T2SL, Shockley–Read–Hall (SRH) traps appear to dominate. In the second case, possible scenarios for the dominance of SRH recombination are discussed to identify pathways for further performance optimization.