Sims determinations of ion-implanted depth distributions

The depth-profiling capabilities of the ion microprobe (SIMS) are applied to the measurement of projected ranges and standard deviations for 114 individual species/substrate combinations of ion-implanted material. The results are presented and compared with theoretical values for 79 cases. Basic agr...

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Bibliographic Details
Published in:International journal of mass spectrometry and ion physics 1980-01, Vol.34 (1), p.147-157
Main Authors: Leta, D.P., Morrison, G.H., Harris, G.L., Lee, C.A.
Format: Article
Language:English
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Summary:The depth-profiling capabilities of the ion microprobe (SIMS) are applied to the measurement of projected ranges and standard deviations for 114 individual species/substrate combinations of ion-implanted material. The results are presented and compared with theoretical values for 79 cases. Basic agreement of the experimental and theoretical results is obtained, though the experimental data show the implanted profiles to be several hundred Å deeper and broader than theory would suggest.
ISSN:0020-7381
1873-3034
DOI:10.1016/0020-7381(80)85022-4