Anomalous Mg incorporation behavior in InGaAlP grown by metalorganic chemical vapor deposition

Mg incorporation behavior in InGaAlP, grown by metalorganic chemical vapor deposition, has been investigated. A large Mg-doping delay was observed, between turning on the Mg-dopant source feeding into the reactor and Mg incorporation into the InGaAlP layer. The Mg-doping delay increased with increas...

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Bibliographic Details
Published in:Journal of crystal growth 1992-05, Vol.119 (3), p.292-296
Main Authors: Nishikawa, Yukie, Sugawara, Hideto, Kokubun, Yoshihiro
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Mg incorporation behavior in InGaAlP, grown by metalorganic chemical vapor deposition, has been investigated. A large Mg-doping delay was observed, between turning on the Mg-dopant source feeding into the reactor and Mg incorporation into the InGaAlP layer. The Mg-doping delay increased with increasing substrate temperature. The Mg-doping delay for InGaP was about twice as long as that for InAlP at the same Cp 2Mg introduction. It is found that the Mg-doping delay decreases monotonically with increasing Mg concentration in the solid phase, independent of substrate temperature and Al composition in the InGaAlP.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(92)90681-8