Adsorption of CO on Si(100)-(2 × 1) at room temperature

Experimental studies using several different surface analytical techniques have shown that carbon monoxide (CO) adsorbs on the Si(100)-(2 × 1) surface at room temperature. X-ray photoelectron spectroscopy (XPS) shows that CO coverage increases with dose size. Ultraviolet photoelectron spectroscopy (...

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Bibliographic Details
Published in:Surface science 1994-01, Vol.301 (1), p.105-117
Main Authors: Chamberlain, J.P., Clemons, J.L., Pounds, Andrew J., Gillis, H.P.
Format: Article
Language:English
Subjects:
Chemistry
Exact sciences and technology
General and physical chemistry
Solid-gas interface
Surface and interface chemistry
Surface physical chemistry
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Summary:Experimental studies using several different surface analytical techniques have shown that carbon monoxide (CO) adsorbs on the Si(100)-(2 × 1) surface at room temperature. X-ray photoelectron spectroscopy (XPS) shows that CO coverage increases with dose size. Ultraviolet photoelectron spectroscopy (UPS) shows molecularly adsorbed CO at the surface. Temperature programmed desorption (TPD) shows first-order kinetics, with activation energy ( E d) estimated to be 0.48 eV. Low-energy electron diffraction (LEED) shows that adsorption of CO disrupts the Si dimers on the Si(100)-(2 × 1) surface. XPS, UPS and TPD all show that CO has a higher sticking probability when exposed to hot filaments in the UHV chamber during dosing. These results suggest the existence of an activation barrier to adsorption of CO on Si(100)-(2 × 1).
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(94)91292-0