The epitaxial growth of IV–VI heterostructures and superlattices on (001)Si

We report for the first time the use of rare-earth chalcogenides as buffer layers on silicon substrates prior to the high vacuum epitaxy of IV–VI compounds for the growth of thin film heterostructures and superlattices. The results of X-ray diffraction characterisation showed that YbS grows at 900–9...

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Bibliographic Details
Published in:Thin solid films 1995-10, Vol.267 (1), p.134-137
Main Authors: Fedorenko, A.I., Fedorov, A.G., Sipatov, A.Yu, Mironov, O.A.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Lead telluride
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Silicon
Transmission electron microscopy
X-ray diffraction
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Summary:We report for the first time the use of rare-earth chalcogenides as buffer layers on silicon substrates prior to the high vacuum epitaxy of IV–VI compounds for the growth of thin film heterostructures and superlattices. The results of X-ray diffraction characterisation showed that YbS grows at 900–950 °C on (001) Si as a high-quality single crystal layer with an X-ray rocking curve half width δ = 300–500 arcsec. Such buffer layers allow us to grow single-crystal IV–VI films and various types of heterostructures and superlattices with crystal quality better than that achievable in the buffer layer (with δ = 100–300 arcsec), over a large area with good uniformity.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(95)06663-2