Electrical and field emission properties of nanocrystalline materials fabricated by electron-beam induced deposition

Three-dimensional structures of nanometer dimensions can be fabricated by electron-beam induced deposition. The technique allows accurate placement of arbitrary shaped structures onto existing substrates at a single process step. It allows tips to be produced with an ultimate radius of curvature for...

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Bibliographic Details
Published in:Microelectronic engineering 1996-01, Vol.30 (1-4), p.471-474
Main Authors: Schößler, C., Kaya, A., Kretz, J., Weber, M., Koops, H.W.P.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Vacuum microelectronics
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Summary:Three-dimensional structures of nanometer dimensions can be fabricated by electron-beam induced deposition. The technique allows accurate placement of arbitrary shaped structures onto existing substrates at a single process step. It allows tips to be produced with an ultimate radius of curvature for scanning probe techniques or field emission applications. Electron-beam induced deposition from organometallic precursors produces small metallic crystallites embedded in an amorphous, carbon-containing matrix. The electrical conductivity of these deposits is highly dependent on the deposition conditions. The conductivity of material with low metal contents is found to be of Poole-Frenkel type. Field emission tips working with low extraction voltages are obtained. A high current is accomplished due to the multiple emission centers available at the front of the tip. Beam confinement to one emission site is demonstrated for the first time for a deposited supertip.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(95)00290-1